microsemi scottsdale division 8700 e. thomas rd. po box 1390, scottsda le, az 85252 usa, (480) 941 - 6300, fax: (480) 947 - 1503 page 1 copyright ? 2001 mscxxxx.pdf 09 - 09 2002 rev 0 www. microsemi . com 3pmt5.0 thru 3PMT170 powermite ? 1500 watt transient absorption zener scottsdale division description these 1500 watt transient voltage suppressors offer power - handling capabilities only found in larger packages. they are most often used for protecting against transients from inductive switching environments or induced secondary lightning effects as found in lower surge levels of iec61000 - 4 - 5. with very fast response times, they are also effective in protection from esd or eft. powermite ? package features include a full metallic bottom that eliminates the possibility of solder - flux entrapm ent during assembly. they also provide unique locking tab acting as an integral heat sink. with its very short terminations, parasitic inductance is minimized to reduce voltage overshoots during fast - rise - time transients . important: for the mo st current data, consult microsemi ?s website: http://www.microsemi.com peak pulse power rat ings features very low profile surface mount package (1.1mm) integral heat sink - locking tabs compatible with automatic insertion equipment f ull metallic bottom eliminates flux entrapment voltage range 5 volts to 170 volts available in both unidirectional or bi - directional (c suffix for bi - directional) maximum ratings operating temperature: - 55c to +150c storage temperature: - 55c to +150c 1500 watt peak pulse power (10 / 1000 sec.) forward surge current: 200 amps (8.3 ms) (excluding bidirectional) repetition surge rate (duty factor): 0.01% lead and mounting temperature: 260c for 10 sec applications / benef its secondary lightning transient protection inductive switching transient protection small footprint ve ry low parasitic inductance for minimal voltage overshoot compliant to iec61000 - 4 - 2 and iec61000 - 4 - 4 for esd and eft protection respectively and iec61000 - 4 - 5 for surge levels defined herein mechanical an d packaging terminals tin - lead plated two - lead side internally connected together cathode designated with band (unidirectional) molded epoxy package meets ul94v - 0 weight: 0.072 grams (approximate) thermal resistance: 2.5c / watt junction to tab 130 c / watt junction to ambient with recommended footprint tape & reel packaging per eia - 481 - 2 (16 mm - 6000 units/reel) powermite ? t ? temperature ? oc peak pulse power (p pp ) or current (i pp ) in percent of 25o c rating 0 50 100 150 0 50 100 75 25 200 3pmt .10 1.0 10 100 t d ? pulse time ? sec p pp ? peak pulse power ? kw 100ns 1s 10s 100s 1ms 10ms
microsemi scottsdale division 8700 e. thomas rd. po box 1390, scottsda le, az 85252 usa, (480) 941 - 6300, fax: (480) 947 - 1503 page 2 copyright ? 2001 mscxxxx.pdf 09 - 09 2002 rev 0 www. microsemi . com 3pmt5.0 thru 3PMT170 powermite ? 1500 watt transient absorption zener scottsdale division electrical characteristic s per line @ 25c unless otherwise specified microsemi part number stand off voltage v wm volts breakdown voltage v br @1 ma volts min clamping voltage v c @ i pp (figure 2) volts max peak pulse current i pp (figure 2) amps standby current i d @ v wm a max temperature coefficient of v br a vbr %/c max 3pmt5.0 5 6.40 9.60 156.2 1000 .057 3pmt6.0 6 6.67 11.4 131.6 1000 .059 3pmt6.5 6.5 7.22 12.3 122.0 500 .061 3pmt7.0 7 7.78 13.3 112.8 200 .065 3pmt7.5 7.5 8.33 14.3 104.9 100 .067 3pmt8.0 8 8.89 15.0 100.0 50 . 070 3pmt8.5 8.5 9.94 15.9 94.3 25 .073 3pmt9.0 9.0 10.0 16.9 88.7 10 .076 3pmt10 10 11.1 18.8 79.8 5 .078 3pmt11 11 12.2 20.1 74.6 5 .081 3pmt12 12 13.3 22.0 68.2 5 .082 3pmt13 13 14.4 23.8 63.0 5 .084 3pmt14 14 15.8 25.8 58.1 5 .086 3pmt1 5 15 16.7 26.9 55.8 5 .087 3pmt16 16 17.8 28.8 52.1 5 .088 3pmt17 17 18.9 30.5 49.2 5 .090 3pmt18 18 20.0 32.2 46.6 5 .092 3pmt20 20 22.2 35.8 41.9 5 .093 3pmt22 22 24.4 39.4 48.1 5 .094 3pmt24 24 26.7 43.0 34.9 5 .096 3pmt26 26 28.9 46.6 32. 2 5 .097 3pmt28 28 31.1 50.0 30.0 5 .098 3pmt30 30 33.3 53.5 28.0 5 .099 3pmt33 33 36.7 59.0 25.2 5 .100 3pmt36 36 40.0 64.3 23.3 5 .101 3pmt40 40 44.4 71.4 21.0 5 .101 3pmt43 43 47.8 76.7 19.6 5 .102 3pmt45 45 50.0 80.3 18.7 5 .102 3pmt48 48 53.3 85.5 17.5 5 .103 3pmt51 51 56.7 91.1 16.5 5 .103 3pmt54 54 60.0 96.3 15.6 5 .104 3pmt58 58 64.4 103 14.6 5 .104 3pmt60 60 66.7 107 14.0 5 .104 3pmt64 64 71.1 114 13.2 5 .105 3pmt70 70 77.8 125 12.0 5 .105 3pmt75 75 83.3 134 11.2 5 .10 5 3pmt78 78 86.7 139 10.8 5 .106 3pmt85 85 94.4 151 9.9 5 .106 3pmt90 90 100 160 9.4 5 .107 3pmt100 100 111 179 8.4 5 .107 3pmt110 110 122 196 7.7 5 .107 3pmt120 120 133 214 7.0 5 .107 3pmt130 130 144 231 6.5 5 .108 3pmt150 150 167 268 5.6 5 .108 3pmt160 160 178 287 5.2 5 .108 3PMT170 170 189 304 4.9 5 .108 for bi - directional indicate a c suffix after the part number (i.e.: 3PMT170c). capacitance will be ? that shown in figure 1. 3pmt
microsemi scottsdale division 8700 e. thomas rd. po box 1390, scottsda le, az 85252 usa, (480) 941 - 6300, fax: (480) 947 - 1503 page 3 copyright ? 2001 mscxxxx.pdf 09 - 09 2002 rev 0 www. microsemi . com 3pmt5.0 thru 3PMT170 powermite ? 1500 watt transient absorption zener scottsdale division 3pmt definitions symbo l definition v rwm working peak reverse voltage: the maximum peak voltage that can be applied over the operating temperature range. v br minimum breakdown voltage: the minimum voltage the devi ce will exhibit at a specified current. v c minimum clamping voltage: the maximum voltage the device will exhibit at the peak pulse current. i d maximum leakage current: the maximum leakage current that will flow at the specified voltage and temperature. outline and pad layo ut inches millimeters dim nominal nominal a 0.070 1.778 b 0.173 4.392 c 0.200 5.080 d 0.035 0.889 e 0.160 4.064 f 0.072 1.829 g 0.056 1.422 h 0.044 1.118 j 0.190 4.826 k 0.210 5.344 l 0.038 0.965 m 0.034 0.864 n 0.030 0.762 p 0.030 0.762 half - value -- ipp 2 0 500 1000 1500 0 50 100 t -- time in microseconds ipp -- peak pulse current -- % ipp 10 / 1000 waveform t t d peak value -- ipp r 10 100 1000 10000 1 10 100 1000 v br : breakdown voltage in volts capacitance in picofarads measured at zero bias measured at stand - off voltage f e d b a c h g mounting pad k j l m n p figure 1 figure 2
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